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PDF BSS84-7 Data sheet ( Hoja de datos )
| Número de pieza | BSS84-7 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
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BSS84
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 2): K84
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
A
D
BC
G TOP VIEW S
ED
G
H
K
J
Drain
L
Gate
Source
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
a 0° 8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
BSS84
-50
-50
±20
-130
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
-50
¾
¾
¾
¾
¾ ¾ V VGS = 0V, ID = -250µA
¾ -15 µA VDS = -50V, VGS = 0V, TJ = 25°C
¾ -60 µA VDS = -50V, VGS = 0V, TJ = 125°C
¾ -100 nA VDS = -25V, VGS = 0V, TJ = 25°C
¾ ±10 nA VGS = ±20V, VDS = 0V
VGS(th) -0.8 ¾ -2.0 V VDS = VGS, ID = -1mA
RDS (ON) ¾ ¾ 10 W VGS = -5V, ID = 0.100A
gFS .05 ¾ ¾ S VDS = -25V, ID = 0.1A
Ciss ¾ ¾ 45 pF
Coss
¾
¾
25
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Crss ¾ ¾ 12 pF
tD(ON)
¾
10
¾ ns VDD = -30V, ID = -0.27A,
tD(OFF)
¾
18
¾ ns RGEN = 50W, VGS = -10V
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30149 Rev. 5 - 2
1 of 2
www.diodes.com
BSS84
1 page | ||
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| PDF Descargar | [ Datasheet BSS84-7.PDF ] | |
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