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PDF BSP320S Data sheet ( Hoja de datos )
| Número de pieza | BSP320S | |
| Descripción | SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP320S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BSP 320 S
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP 320 S
VDS
60 V
ID
2.9 A
RDS(on)
0.12 Ω
Package Marking
SOT-223
Ordering Code
Q67000-S4001
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
TA = 100 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25 Ω
L = 14.3 mH, Tj = 25 °C
Avalanche energy, periodic limited by Tj(max)
Avalanche current, repetitive,limited by Tj(max)
Reverse diode dv/dt
IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs
Tjmax = 150 °C
Gate source voltage
Power dissipation
TA = 25 °C
Semiconductor Group
1
Symbol
ID
IDpuls
EAS
EAR
IAR
dv/dt
VGS
Ptot
Values
2.9
1.85
11.6
60
0.18
2.9
6
± 20
1.8
Unit
A
mJ
A
KV/µs
V
W
29/01/1998
1 page  
BSP 320 S
Power dissipation
Ptot = ƒ(TA)
2.0
W
Ptot 1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
3.0
A
2.6
ID 2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Semiconductor Group
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
10 1
ZthJC
10 0
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -5
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5 29/01/1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP320S.PDF ] | |
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