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PDF BSP316 Data sheet ( Hoja de datos )
| Número de pieza | BSP316 | |
| Descripción | SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP316 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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BSP 316
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V
Type
BSP 316
Type
BSP 316
Pin 1 Pin 2 Pin 3 Pin 4
GD S D
VDS
-100 V
ID
-0.65 A
Ordering Code
Q67000-S92
RDS(on)
2.2 Ω
Package
SOT-223
Tape and Reel Information
E6327
Marking
BSP 316
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Continuous drain current
TA = 24 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
ID
IDpuls
Ptot
Values
-100
-100
± 20
-0.65
-2.6
1.8
Unit
V
A
W
Semiconductor Group
1
Sep-12-1996
1 page  
BSP 316
Power dissipation
Ptot = ƒ(TA)
2.0
W
Ptot 1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ -10 V
-0.70
A
-0.60
ID -0.55
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0
20 40 60 80 100 120 °C 160
TA
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
ZthJC
10 1
10 0
Semiconductor Group
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5 Sep-12-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP316.PDF ] | |
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