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PDF BSP250 Data sheet ( Hoja de datos )
| Número de pieza | BSP250 | |
| Descripción | P-channel enhancement mode vertical D-MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BSP250
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC13b
1997 Jun 20
1 page  
Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSP250
600
handbook, halfpage
C
(pF)
400
200
0
0 −10
MBE144
Ciss
Coss
Crss
−20 VDS (V) −30
VGS = 0.
Tj = 25 °C.
Fig.4 Capacitance as a function of drain source
voltage; typical values.
handbook−ID,1h2alfpage VGS =
(A) −10 V
−10
−7.5 V
−8
−6
−4
−2
0
0 −2 −4 −6
MBE149
−6 V
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
−8 −10 −12
VDS (V)
Tj = 25 °C.
Fig.5 Output characteristics; typical values.
handbook−,1h6alfpage
ID
(A)
−12
MBE150
−8
−4
0
0 −2 −4 −6 −8
VGS (V)
handbook−,1h0alfpage
VGS
(V)
−8
MBE145
−6
−4
−2
0
0 −2 −4 −6 −8 −10
Qg (nC)
VDS = −10 V.
Tj = 25 °C.
Fig.6 Transfer characteristic, typical values.
1997 Jun 20
VDD = −15 V.
ID = −3 A.
Fig.7 Gate-source voltage as a function of total
gate charge.
5
5 Page 
Philips Semiconductors
P-channel enhancement mode vertical
D-MOS transistor
NOTES
Product specification
BSP250
1997 Jun 20
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BSP250.PDF ] | |
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