|
|
PDF BUZ45B Data sheet ( Hoja de datos )
| Número de pieza | BUZ45B | |
| Descripción | 10A/ 500V/ 0.500 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUZ45B (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
Semiconductor
Data Sheet
BUZ45B
October 1998 File Number 2259.1
10A, 500V, 0.500 Ohm, N-Channel Power
Features
[ /Title
(BUZ45
B)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 10A, 500V
• rDS(ON) = 0.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(10A, transistors requiring high speed and low gate drive power.
500V, This type can be operated directly from integrated circuits.
0.500 Formerly developmental type TA17435.
Ohm, N-
Channel Ordering Information
Power
PART NUMBER
PACKAGE
BRAND
MOS- BUZ45B
TO-204AA
BUZ45B
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
FET)
NOTE: When ordering, use the entire part number.
/Author
G
()
/Key-
S
words
(Harris
Semi- Packaging
conduc-
tor, N-
JEDEC TO-204AA
Channel
Power
MOS-
FET,
DRAIN
(FLANGE)
TO-
204AA)
/Creator
SOURCE (PIN 2)
() GATE (PIN 1)
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 page  
BUZ45B
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
15
ID = 14.4A
101
TJ = 150oC
TJ = 25oC
100
10
5
VDS = 100V
VDS = 400V
10-1
0
0.5 1.0 1.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
RL
+
RG
VDD
-
DUT
VGS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50kΩ
0.3µF
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 16. GATE CHARGE TEST CIRCUIT
5
00 20 40 60 80 100 120
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
Ig(REF)
0
FIGURE 17. GATE CHARGE WAVEFORMS
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BUZ45B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUZ45 | 9.6A/ 500V/ 0.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| BUZ45 | Trans MOSFET N-CH 500V 9.6A |  New Jersey Semiconductor |
| BUZ45A | 8.3A/ 500V/ 0.800 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| BUZ45B | 10A/ 500V/ 0.500 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |