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PDF BUK856-800 Data sheet ( Hoja de datos )
| Número de pieza | BUK856-800 | |
| Descripción | Insulated Gate Bipolar Transistor IGBT | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Insulated Gate Bipolar Transistor (IGBT)
Product Specification
BUK856-800A
GENERAL DESCRIPTION
Fast-switching N-channel insulated
gate bipolar power transistor in a
plastic envelope.
The device is intended for use in
motor control, DC/DC and AC/DC
converters, and in general purpose
high frequency switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCE
IC
Ptot
VCEsat
Eoff
Collector-emitter voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
Turn-off energy Loss
MAX.
800
24
125
3.5
1.0
UNIT
V
A
W
V
mJ
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
g
c
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VCE
VCGR
±VGE
IC
IC
ICLM
ICM
Ptot
Tstg
Tj
Collector-emitter voltage
-
Collector-gate voltage
Gate-emitter voltage
RGE = 20 kΩ
-
Collector current (DC)
Tmb = 25 ˚C
Collector current (DC)
Tmb = 100 ˚C
Collector Current (Clamped
Tj ≤ Tjmax.
Inductive Load)
VCL ≤ 500 V
Collector current (pulsed peak value, Tj ≤ Tjmax.
on-state)
Total power dissipation
Storage temperature
Tmb = 25 ˚C
-
Junction Temperature
-
-5
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
In free air
TYP.
-
60
MAX.
800
800
30
24
12
40
50
125
150
150
MAX.
1.0
-
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
March 1993
1
Rev 1.000
1 page  
Philips Semiconductors
Insulated Gate Bipolar Transistor (IGBT)
Product Specification
BUK856-800A
10000 t / ns
1000
100
BUK8Y6-800A
td(off)
tf
10
1
10 100
Rg / Ohm
1000
Fig.13. Typical Switching Times vs. RG
conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C
t / ns
500
400
BUK8Y6-800A
tf
300 td(off)
200
100
0
0 10 20 30
IC / A
Fig.14. Typical Switching Times vs. IC
conditions: VCL = 500 V; RG = 25 Ω; Tj = 125˚C
VCC = VCL
t p : adjust for correct Ic
Lc
D.U.T.
VGE
RG
IC measure
0V
0R1
Fig.15. Test circuit for inductive load switching times.
E(off) / mJ
4
BUK8Y6-800A
3
2
1
0
1 10 100 1000
Rg / Ohm
Fig.16. Typical Energy loss at turn-off vs. RG
conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C
4 E(off) / mJ
3
2
1
BUK8Y6-800A
VCL / V = 500
400
300
0
0 10 20 30 40
IC / A
Fig.17. Typical Energy loss at turn-off vs. IC
conditions: VCL = 500 V; RG = 25 Ω; Tj = 125˚C;
parameter VCL
I
90%
10%
V
90%
tr
td(on)
IC
VGE
td(off)
tc
tf
t
VCE
10%
t
Fig.18. Inductive Load Switching Times definitions.
March 1993
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUK856-800.PDF ] | |
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