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PDF BUK7510-30 Data sheet ( Hoja de datos )
| Número de pieza | BUK7510-30 | |
| Descripción | TrenchMOS transistor Standard level FET | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7510-30
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
30
75
142
175
10.5
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
16
75
53
240
142
175
UNIT
V
V
V
A
A
A
W
˚C
TYP.
-
60
MAX.
1.05
-
UNIT
K/W
K/W
MIN.
-
MAX.
2
UNIT
kV
December 1997
1
Rev 1.100
1 page  
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7510-30
ID / A
100
7510-30
80
Tj / C = 25
175
60
40
20
0
0 2 4 6 8 10
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
40
7510-30
30
Tj / C = 25
175
20
10
0
0 20 40 60 80 100
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
a
2
30V TrenchMOS
1.5
1
0.5
0
-100
-50
0 50 100 150 200
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
-0100
-50
0 50
Tj / C
100 150 200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ
98%
1E-04
1E-05
1E-06
01234
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
5
C / pF
10000
7510-30
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS / V
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1997
5
Rev 1.100
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUK7510-30.PDF ] | |
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