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Datasheet B5817W-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
B58 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | B5817W | SCHOTTKY BARRIER DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W SCHOTTKY BARRIER DIODE
FEATURES For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
SOD-123
MARKING: B5817W:SJ
B5818W:SK
B5819W:SL
The marking b  JCET diode | | |
| 2 | B5817W | Schottky Diode Small Signal Product
B5817W/B5818W/B5819W
Taiwan Semiconductor
SOD-123 40V/1A Schottky Diode
FEATURES
- Low Forward Voltage Drop - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant
MECHANICAL DATA
- Case: Bend lead SOD-123 package - High temperature soldering gua  Taiwan Semiconductor diode | | |
| 3 | B5817W | Schottky Barrier Diode B5817W-B5819W
Schottky Barrier Diode
+
SOD-123
0.053(1.35) Max.
0.022(0.55) Typ. Min.
Features
-
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications.
0.152(3.85) 0.140(3.55)
0.010(0.25) Min.
0.112(2.85) 0.100(2.55)
0.006(0.15) Typ. Min.
0.06  LGE diode | | |
| 4 | B5817W | Schottky Barrier Diode BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Extremely low VF. z Low stored change,majority carrier
conduction. z Low power loss/high efficient
Pb
Lead-free
B5817W-B5819W
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters. z Free Wheeling, And Pol  Galaxy Semi-Conductor diode | | |
| 5 | B5817W | Schottky Barrier Rectifier, Diode MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
B5817W Thru
B5819W
Features
• Guard Ring Protection • Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters • Power  MCC rectifier | | |
| 6 | B5817W | SCHOTTKY BARRIER DIODE 1. 05
B5817W SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 450 mW (Tamb=25℃) Collector current
IF: 1 A Collector-base voltage
VR: 20 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOD-123
Unit: mm
1. 6
2. 70 3. 70
0. 55
MARKING: SJ
ELECTRICAL CHARACT  TRANSYS diode | | |
| 7 | B5817W | Surface Mount Schottky Barrier Diodes Surface Mount Schottky Barrier Diodes
Features:
*Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-123 Package
Description:
These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extrem  WEITRON diode | |
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