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PDF SSF2116EJ3 Data sheet ( Hoja de datos )

Número de pieza SSF2116EJ3
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
Logotipo Silikron Logotipo



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No Preview Available ! SSF2116EJ3 Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
20V
RDS(on) 14.5mohmtyp.
ID 8.5A DFN2X5-6L-EP
SSF2116EJ3
Marking and pin
Assignment
Schematic diagram
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 25°C
IDM
VGS
PD @TC = 25°C
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Gate to source voltage
Power Dissipation
Operating Junction and Storage Temperature Range
Max.
8.5
75
34
±10
1.3
-55 to + 150
Units
A
V
W
°C
©Silikron Semiconductor CO.,LTD.
2012.02.01
www.silikron.com
Version : 1.2(preliminary)
page 1 of 6

1 page




SSF2116EJ3 pdf
Ordering and Marking Information
Device Marking: 2116EJ3
Package (Available)
DFN2X5-6L-EP
Operating Temperature Range
C : -55 to 150 ºC
SSF2116EJ3
Devices per Unit
Package
Type
Units/
Tape
DFN2X5-6L-EP 3000pcs
Tapes/
Inner Box
4pcs
Units/
Inner Box
12000pcs
Inner Boxes/
Carton Box
4pcs
Units/
Carton Box
48000pcs
Reliability Test Program
Test Item Conditions
High
Tj=125to 150@
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150@ 100% of
Temperature Max VGSS
Gate
Bias(HTGB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO.,LTD.
2012.02.01
www.silikron.com
Version : 1.2(preliminary)
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