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PDF MMBFU310 Data sheet ( Hoja de datos )
| Número de pieza | MMBFU310 | |
| Descripción | FET TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Symbol
vDs
Vgs
'G
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
T StQ
•Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
25
25
10
Max
350
2.8
150
357
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
MMBFU310
CASE 318-02/03, STYLE 10
SOT-23 (TO-236AA/AB)
FET
TRANSISTOR
N-CHANNEL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
G(l = -1.0 yuA, V DS = 0)
Gate 1 Leakage Current
(vqs = -15 V, v Ds = o)
Gate 2 Leakage Current
(VGS = -15V,V DS = 0, TA = 125°C)
Gate Source Cutoff Voltage
(Vqs = 10 V, Id = 10 nA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(V DS = 10V,VGS = 0)
Gate-Source Forward Voltage
G(l = 10 mA, V D S = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V D s = 10 V, Dl = 10 mA, f = 1.0 kHz)
Output Admittance
(V D s = 10 V, Dl = 10 mA, f = 1.0 kHz)
Input Capacitance
(VGS = -10 V, V DS
10 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(Vqs = - 10 V, V DS = 10 V, f
1.0 MHz)
Symbol
V(BR)GSS
!G1SS
'G2SS
v GS(off)
-25
-2.5
Max
-150
-6.0
Unit
Vdc
PA
Vdc
toss
v GS(f)
lYfsl
60
1.0 Vdc
mmhos
150 /nmhos
5.0 pF
2.5 pF
3-63
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBFU310.PDF ] | |
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