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Número de pieza | MD3251F | |
Descripción | DUAL AMPLIFIER TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MD3251F (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
MD3250.A, MD3251.A
MD3250F,AF, MD3251F,AF
MQ3251
Derate above 25°C
MD3250A MD3251,A
MD3250F,AF, MD3251F,AF
MQ3251
Total Device Dissipation
@ TC = 25°C
MD3250A MD3251.A
MD3250F,AF, MD3251F,AF
MQ3251
Derate above 25°C
MD3250A MD3251,A
MD3250F.AF, MD3251F,AF
MQ3251
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
'C
PD
Value
Unit
40 Vdc
50 Vdc
5.0 Vdc
50 mAdc
One Die
All Die
Equal Power
mW
575
350
400
3.29
2.0
2.28
Pd
625
400
600
3.57
2.28
3.42
mW/°C
Watts
TJ' Tstg
1.8 2.5
1.0 2.0
0.9 3.6
10.3
5.71
5.13
14.3
11.4
20.5
-65 to +200
mW/°C
°C
MD3250AF,AF
MD3251AF,AF
MQ3251
MD3250,A
MD3251,A
CASE 654-07, STYLE 1
MD3250F,AF
MD3251F,AF
CASE 610A-04, STYLE 1
MQ3251
CASE 607-04, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MD3251A MD3251,A
MD3250F,AF, MD3251F,AF
MQ3251
Thermal Resistance, Junction to Ambient
MD3250A MD3251,A
MD3250F,AF, MD3251F,AF
MQ3251
Symbol
Rfuc
ReJAd)
Coupling Factors
MD3250A MD3251,A
MD3250F.AF, MD3251F,AF
MQ3251 (0.1 -0.2)
(Q1-Q3orQ1-Q4)
(1) R#ja is measured with the device soldered into a typical printed circuit board.
One Die
All Die
Equal Power
97 70
175 87.5
195 48.8
304
500
438
Junction to
Ambient
280
438
292
Junction to
Case
84 44
75
57
55
Unit
°C/W
°c/w
%
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 10 juAdc, El = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /xAdc, lc = 0)
- -V(BR)CEO
40
Vdc
— —V(BR)CBO
50
Vdc
— —V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VC B = 40 Vdc, l£ = 0)
(Vcb = 40 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(Vbe = 3.0 Vdc, lc = 0)
'CBO
'EBO
- 10 nAdc
10 /uAdc
— — 10 nAdc
5-57
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MD3251F.PDF ] |
Número de pieza | Descripción | Fabricantes |
MD3251 | (MD3250 / MD3251) DUAL AMPLIFIER TRANSISTOR | Motorola Semiconductors |
MD3251 | DUAL GENERAL PURPOSE TRANSISTOR | New Jersey Semiconductor |
MD3251 | DUAL PNP SILICON TRANSISTOR | Central Semiconductor |
MD3251A | (MD3250 / MD3251) DUAL AMPLIFIER TRANSISTOR | Motorola Semiconductors |
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