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PDF MD3250 Data sheet ( Hoja de datos )
| Número de pieza | MD3250 | |
| Descripción | DUAL PNP SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MD3250 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MD3250 MD3250A
MD3251 MD3251A
DUAL PNP
SILICON TRANSISTOR
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MD3250
and MD3251 Series types are dual PNP silicon
transistors, manufactured by the epitaxial planar
process utilizing two individual chips mounted in
a hermetically sealed metal case, designed for
differential amplifier applications.
TO-78 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Die)
Power Dissipation (One Die), TC=25°C
Power Dissipation (Both Die), TC=25°C
Operating and Storage Junction Temperature
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
PD
PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=40V
ICBO
VCB=40V, TA=150°C
IEBO
VBE=3.0V
BVCEO
IC=10mA
40
BVCBO
IC=10μA
50
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
0.60
VBE(SAT)
IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=10μA (MD3250,A)
25
hFE
VCE=5.0V, IC=10μA (MD3251,A)
50
hFE
VCE=5.0V, IC=100μA (MD3250,A)
50
hFE
VCE=5.0V, IC=100μA (MD3251,A)
80
hFE
VCE=5.0V, IC=1.0mA (MD3250,A)
50
hFE
VCE=5.0V, IC=1.0mA (MD3251,A)
100
hFE
VCE=5.0V, IC=10mA (MD3250,A)
50
hFE
VCE=5.0V, IC=10mA (MD3251,A)
100
40
50
5.0
50
575
625
1.8
2.5
-65 to +200
MAX
10
10
10
0.25
0.50
0.90
1.2
150
300
150
300
UNITS
V
V
V
mA
mW
mW
W
W
°C
UNITS
nA
μA
nA
V
V
V
V
V
V
V
R0 (9-June 2009)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MD3250.PDF ] | |
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