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PDF BSS80B Data sheet ( Hoja de datos )
| Número de pieza | BSS80B | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BSS80B,C
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
vEBO
'C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, Ta = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
T stg
'Thermal Resistance Junction to Ambient
R &JA
mm•Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
_^^^
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 10 mA)
Collector-Base Breakdown Voltage
dC = 10 tiA)
Emitter-Base Breakdown Voltage
(IE = 10 tiA)
Collector Cutoff Current
(Vcb = 50 Vdc)
(VCB = 50 Vdc, Ta = 150°C
Emitter Cutoff Current
(VBE = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
flC = 150 mA, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 150 mA, Bl = 15 mA)
dC = 500 mA, Bl = 50 mA)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mA, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
mA('B1 °= >B2 ** 1 5
r
Vcc = 30 V, lc = 150 mA)
Storage Time
Fall Time
"B1 ** 'S2 ** 15 mA,
VCc = 30 V, Cl = 150 mA)
(1) Pulse Test: Pulse Width =s 300 fis, Duty Cycle « 2.0%.
Symbol
v (BR)CEO
v (BR)CB0
v (BR)EBO
'CBO
Min
60
'EBO
hFE
v CE(sat)
40
100
h
CQ bo
Value
40
60
5.0
800
Max
350
2.8
150
357
Max
120
300
0.4
1.6
8.0
10
40
80
30
Unit
Vdc
Vdc
Vdc
mA
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
nA
MA
Vdc
PF
3-40
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSS80B.PDF ] | |
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