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Número de pieza | STF13N60M2 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
2
Power MOSFETs in TO-220FP and I PAKFP packages
Datasheet − production data
Features
3
2
1
TO-220FP
1
23
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
AM15572v1
Order codes VDS @ TJmax RDS(on) max ID
STF13N60M2
STFI13N60M2
650 V
0.38 Ω 11 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF13N60M2
STFI13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220FP
2
I PAKFP (TO-281)
Packaging
Tube
March 2014
This is information on a product in full production.
DocID023939 Rev 4
1/14
www.st.com
14
1 page STF13N60M2, STFI13N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 11 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/μs
VDD = 60 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
- 11 A
- 44 A
- 1.6 V
- 297
ns
- 2.8
μC
- 18.5
A
- 394
ns
- 3.8
μC
- 19
A
DocID023939 Rev 4
5/14
5 Page STF13N60M2, STFI13N60M2
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Package mechanical data
Table 9. TO-220FP mechanical data
mm
Min.
Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
DocID023939 Rev 4
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11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet STF13N60M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STF13N60M2 | N-CHANNEL POWER MOSFET | STMicroelectronics |
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