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PDF MD4957 Data sheet ( Hoja de datos )
| Número de pieza | MD4957 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MD4957
CASE 654-02, STYLE 1
TO-78
DUAL
HIGH FREQUENCY TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
VCBO
VEBO
ic
PD
Tj, Tstg
Value
30
30
3.0
30
One Side Both Sides
Unit
Vdc
Vdc
Vdc
mAdc
200
1.15
400
2.3
- 65 to + 200
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c<l = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 ^Adc, El = 0)
Emitter-Base Breakdown Voltage
E(l = 100 /uAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 20 Vdc, l£ = 0)
ON CHARACTERISTICS
DC Current Gain
c(l = 2.0 mAdc, V C e = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 2.0 mAdc, VC e = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Small Signal Current Gain
dC = 2.0 mAdc, Vqe = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
E(l = 2.0 mAdc, VC b = 10 Vdc, f = 63.6 MHz)
Noise Figure
dC = 2.0 mAdc, Vce = 10 Vdc, f = 450 MHz) (Figure 1)
C(l
=
2.0 mAdc, Vce
=
1°
vdc
-
RS
=
50 ohms f
-
=
1 -° GHz »
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
(Vce = 10 Vdc, Ic = 2.0 mAdc, f = 450 MHz) (Figure 1)
(V C e = 10 Vdc, Ic = 2.0 mAdc, R$ = 50 ohms, f = 1.0 GHz)
Symbol
Min
v (BR)CEO
v (BR)CBO
V(BR)EBO
!CBO
30
30
3.0
—
h FE
20
fT
Ccb
hfe
rb'C c
NF
1000
—
20
—
-
-G pe
Typ
—
—
—
—
—
1500
0.4
—
4.0
2.6
5.0
18
13
Max
—
—
—
0.1
150
—
0.8
200
8.0
-
-
Unit
Vdc
Vdc
Vdc
fiAdc
—
MHz
pF
—
ps
dB
dB
7-104
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MD4957.PDF ] | |
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