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PDF SUP10250E Data sheet ( Hoja de datos )

Número de pieza SUP10250E
Descripción N-Channel MOSFET
Fabricantes Vishay 
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SUP10250E
Vishay Siliconix
N-Channel 250 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) () MAX.
0.0315 at VGS = 10 V
0.0325 at VGS = 7.5 V
ID (A)
63
62
Qg (TYP.)
57.6 nC
TO-220AB
Top View
S
D
G
Ordering Information:
SUP10250E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® power MOSFET
• Tuned for the lowest RDS-Coss FOM
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
G
• DC/DC converter
• Motor drive switch
• DC/AC inverter
S
• Solar micro inverter
N-Channel MOSFET
• Class D audio amplifier
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
250
± 20
63
36.3
150
60
180
375 b
125 b
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB mount) c
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
°C/W
S16-1323-Rev. A, 04-Jul-16
1
Document Number: 79033
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SUP10250E pdf
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SUP10250E
Vishay Siliconix
1000
100
10
IDM limited
ID limited
Axis Title
10000
100 μs 1000
Limited by RDS(on) (1)
1
1 ms 100
0.1
TC = 25 °C
Single pulse
0.01
0.1 1
BVDSS limited
10 100
10 ms
100 ms, DC
10
1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Axis Title
100 10000
10
150 °C
25 °C
1000
100
1
0.00001
0.0001
0.001
Time (s)
2nd line
0.01
10
0.1
Single Pulse Avalanche Current Capability vs. Time
1
Duty cycle = 0.5
Axis Title
10000
0.1
0.01
0.001
0.2
0.1
0.05
0.02
Single pulse
0.01
0.1 1
10
Square Wave Pulse Duration (s)
2nd line
Notes:
PDM
1000
t1
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = RthJA = 40 °C/W
100
3. TJM - TA = PDMZthJA (t)
4. Surface mounted
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-1323-Rev. A, 04-Jul-16
5
Document Number: 79033
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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