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PDF SW50N06T Data sheet ( Hoja de datos )
| Número de pieza | SW50N06T | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW50N06T
N-channel D-PAK/TO-220 MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 16.8mΩ)@VGS=10V
■ Gate Charge (Typ 41nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-252
TO-220
1
2
3
12 3
BVDSS : 60V
ID : 50A
RDS(ON) : 16.8mΩ
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
1
3
Order Codes
Item
1
2
Sales Type
SW D 50N06
SW P 50N06
Marking
SW50N06T
SW50N06T
Package
TO-252
TO-220
Packaging
REEL
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-252
TO-220
60
50*
32*
200
± 20
180
23.4
5
87.4 114.7
0.7 0.9
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
TO-252
TO-220
1.43 1.09
71.8 53.1
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
1/6
1 page  
SAMWIN
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
5.5mA
VGS
VGS
VDS
DUT
10V
QGS
SW50N06T
QG
QGD
Charge
nC
Fig. 13. Switching time test circuit & waveform
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW50N06T.PDF ] | |
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