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Número de pieza | TSP60R280S1 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Truesemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSP60R280S1 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! TSP60R280S1
600V 15A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.24Ω
• Ultra Low gate charge (typ. Qg = 43nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
600
15
9.4
45
±30
284
2.4
0.43
15
104
-55 to +150
300
Value
1.2
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
℃
℃
Unit
℃/W
℃/W
℃/W
www.truesemi.com
1 page Typical Performance Characteristics
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
Avalanche energy
VGS=f(Qg), ID=6.5 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=6.5 A; VDD=50 V
© 2015 Truesemi Semiconductor Corporation
VBR(DSS)=f(Tj); ID=0.25 mA
5
www.truesemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TSP60R280S1.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSP60R280S1 | N-Channel MOSFET | Truesemi |
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