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PDF MDS1101 Data sheet ( Hoja de datos )
| Número de pieza | MDS1101 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDS1101 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDS1101
Single N-channel Trench MOSFET 12V, 15A, 8mΩ
General Description
The MDS1101 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1101 is suitable device for DC/DC Converter
and general purpose applications.
Features
VDS = 12V
ID = 15A @VGS = 4.5V
RDS(ON)
< 8.0 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
G
8 Leads, SOIC
D
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Apr. 2016. Ver. 1.0
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Symbol
RθJA
RθJC
Rating
12
±12
15
12
78
2.5
1.6
31
-55~150
Unit
V
V
A
W
mJ
oC
Rating
50
25
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
SOIC-8 Land Pattern
Apr. 2016. Ver. 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDS1101.PDF ] | |
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