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Número de pieza | MDP5N50Z | |
Descripción | N-Channel MOSFET | |
Fabricantes | MagnaChip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MDP5N50Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! MDP5N50Z / MDF5N50Z
N-Channel MOSFET 500V, 5A, 1.4Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 500V
ID = 5.0A
RDS(ON) ≤ 1.4Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP5N50Z MDF5N50Z
500
±30
5.0 5.0*
3.2 3.2*
20 20*
93 27
0.74 0.22
93
4.5
230
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
MDP5N50Z
62.5
1.35
MDF5N50Z
62.5
4.6
Unit
oC/W
May. 2010 Version 1.3
1 MagnaChip Semiconductor Ltd.
1 page 102
Operation in This Area
is Limited by R DS(on)
101
10 µs
100 µs
1 ms
10 ms
DC 100 ms
100
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25℃
100 101 102
VDS, Drain-Source Voltage [V]
Fig.13 Maximum Safe Operating Area
MDF5N50Z (TO-220F)
10000
8000
single Pulse
RthJC = 4.6℃/W
TC = 25℃
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation- MDF5N50Z (TO-220F)
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=4.6℃/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.11 Transient Thermal Response Curve
MDF5N50Z (TO-220F)
May. 2010 Version 1.3
5 MagnaChip Semiconductor Ltd.
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MDP5N50Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
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