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PDF MT4410 Data sheet ( Hoja de datos )
| Número de pieza | MT4410 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | MOS-TECH | |
| Logotipo |  |
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MOS-TECH Semiconductor Co.,LTD
MT4410
N-Channel
PowerTrench®
MOSFET
30V, 18A, 4.5mΩ
Features
rDS(on) = 4.5mΩ, VGS = 10V, ID = 18A
rDS(on) = 6.5mΩ, VGS = 4.5V, ID = 17A
High performance trench technology for extremely low
rDS(on)
Low gate charge
High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Applications
DC/DC converters
RoHS Compliant
Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R
tAV
=≠
0
(L/R)ln[(IAS*R)/(1.3*RATED
BVDSS
-
VDD)
+1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.1
1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = 5V
30
20
10
0
1.5
TJ = 150oC
TJ = 25oC
TJ = -55oC
2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
3.5
50
VGS = 10V
VGS = 5V
40 VGS = 4V
14
ID = 15A
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
20
10
0
0
VGS = 3V
VGS = 2.5V
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.1 0.2 0.3 0.4
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5
Figure 7. Saturation Characteristics
10
8
6
4
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.2
VGS = VDS, ID = 250µA
1.0
1.0
0.8
0.8
0.6
-80
VGS = 10V, ID = 15A
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MT4410.PDF ] | |
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