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PDF SM2558NUB Data sheet ( Hoja de datos )
| Número de pieza | SM2558NUB | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM2558NUB
®
N-Channel Enhancement Mode MOSFET
Features
· 25V/60A,
RDS(ON)=4.5mW (Typ.) @ VGS=10V
RDS(ON)=7.5mW (Typ.) @ VGS=4.5V
· Reliable and Rugged
· Avalanche Rated
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
S
D
G
Top View of TO-251
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM2558N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
UB : TO-251
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (80ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM2558N UB : SM2558N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2014
1
www.sinopowersemi.com
1 page  
SM2558NUB
Typical Operating Characteristics (Cont.)
®
Output Characteristics
160
V = 5,6,7,8,9,10V
GS
140
4.5V
120
4V
100
80
60 3.5V
40
3V
20
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Gate-Source On Resistance
18
IDS=40A
16
14
12
10
8
6
4
2
0
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
14
12
10 VGS=4.5V
8
6 VGS=10V
4
2
0
0 20 40 60 80 100 120 140 160
ID- Drain Current (A)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2014
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM2558NUB.PDF ] | |
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