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PDF MJD32CUQ Data sheet ( Hoja de datos )

Número de pieza MJD32CUQ
Descripción 100V PNP HIGH VOLTAGE TRANSISTOR
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MJD32CUQ
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK)
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > -100V
IC = -3A High Continuous Collector Current
ICM = -5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary NPN Type: MJD31CUQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
C
B
Top View
E
Device Schematic
Pin Out Configuration
Top View
Ordering Information (Notes 4 & 5)
Part number
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
MJD32CUQ-13
Automotive
MJD32CU
13
16 2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and
Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MJD32CU
MJD32CU = Product Type Marking Code
= Manufacturers’ Code Marking
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
MJD32CUQ
Document number: DS39134 Rev. 1 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated

1 page




MJD32CUQ pdf
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1,000
N
AI
G
NT
RE
R
100
U
C
C
D
,E
hF
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
VCE = -4V
1
R
MITTE
R-E
O
CT
GE(V)
TOLA
V
0.1
E
OLL
C
, T)A
-V(CES
N
O
RTAI
U
TA
S
0.01
IC / I B = 8
MJD32CUQ
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
10
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Typical DC Current Gain vs. Collector Current
()GEV
TOLA
1.4
1.2
VCE = -4V
V
N
1.0
O
N-
R
U
0.8
T
R
TA = -55°C
MTTIE
0.6
TA = 25°C
E
-SE 0.4
TA = 85°C
A
B
TA = 150°C
, )N 0.2
O
(E
-VB
0
1
10
100
1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.001
1
10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V) 1.2
E( IC/ IB = 8
G
OLTA 1.0
V
N
O
RATI
0.8
TA = -55°C
U
SAT
0.6
TA = 25°C
R
TTE 0.4
TA = 85°C
MI
E
TA = 150°C
SE-
BA
0.2
, SAT) 0
VBE( 1
-
10 100 1,000
-IC, COLLECTOR CURRENT (mA)
Typical Base-Emitter Saturation Voltage
vs. Collector Current
10,000
100
Cibo
Cobo
10
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
FigTuyrpeic5aTlyCpaicpaal cCitaapnacceitaCnhcaeraCchtaerraiscttiecsristics
MJD32CUQ
Document number: DS39134 Rev. 1 - 2
5 of 7
www.diodes.com
August 2016
© Diodes Incorporated

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