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PDF HMC784AMS8GE Data sheet ( Hoja de datos )
| Número de pieza | HMC784AMS8GE | |
| Descripción | GaAs MMIC 10 WATT T/R SWITCH | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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HMC784AMS8GE
v01.0117
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Typical Applications
The HMC784AMS8GE is ideal for:
• Cellular/4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
Functional Diagram
Features
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +60 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.3 dB
MSOP8G Package: 14.8 mm2
General Description
The HMC784AMS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS logic families.
Electrical Specifications,
TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min.
Typ.
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.3
0.3
0.4
0.4
0.7
Isolation
DC - 4.0 GHz
24
28
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
30
26
20
14
Input Power for 0.1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
1.0 - 4.0 GHz
31
36
38
Input Power for 1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
35
38
33
38
40
Input Third Order Intercept
(Two-tone input power = +27 dBm each tone)
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
61
62
61
60
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
82
112
Max.
0.6
0.8
0.9
1.0
1.5
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
ns
ns
Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc.,
1 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
1 page  
v01.0117
Input IP3 vs. Temperature
27 dBm Tones, Vdd = +3V
70
60
50
40
30
20
0
1
+25 C
2
FREQUENCY (GHz)
+85 C
3
4
-40 C
Input IP3 vs. Temperature
27 dBm Tones, Vdd = +8V
70
60
50
40
30
20
0
1
+25 C
2
FREQUENCY (GHz)
+85 C
3
4
-40 C
HMC784AMS8GE
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Input IP3 vs. Temperature
27 dBm Tones, Vdd = +5V
70
60
50
40
30
20
0
1
+25 C
2
FREQUENCY (GHz)
+85 C
3
4
-40 C
Input P1dB vs. Vdd
50
45
40
35
30
25
0
0.05
0.1 0.15
FREQUENCY (GHz)
+3 V
+5 V
0.2 0.25
+8 V
Input IP3 vs. Tone Power @ Vdd = +5V
70
60
50
40
30
20
0
0.05 0.1 0.15
FREQUENCY (GHz)
+27 dBm
+25 dBm
0.2 0.25
+20 dBm
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
4
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| PDF Descargar | [ Datasheet HMC784AMS8GE.PDF ] | |
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