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Número de pieza | PB5G8JW | |
Descripción | Dual N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
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Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 35mΩ @VGS = 4.5V
ID
5A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
5
3.9
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.4
0.9
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM
86
UNITS
°C / W
REV 1.0 1 2016/7/5
1 page PB5G8JW
Dual N-Channel Enhancement Mode MOSFET
REV 1.0 5 2016/7/5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PB5G8JW.PDF ] |
Número de pieza | Descripción | Fabricantes |
PB5G8JW | Dual N-Channel Enhancement Mode MOSFET | UNIKC |
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