(PDF) PV601CA Datasheet - N&P-Channel Enhancement Mode MOSFET

Número de pieza	PV601CA
Descripción	N&P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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Hay una vista previa y un enlace de descarga de PV601CA (archivo pdf) en la parte inferior de esta página. Total 11 Páginas
No Preview Available ! PV601CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V -30V 28mΩ @VGS = -10V ID 7A -6.4A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N7 P -6.4 ID N 5.6 P -5.1 Pulsed Drain Current1 N 25 IDM P -23 Avalanche Current N 12 IAS P -19.9 Avalanche Energy L = 0.1mH N 7.2 EAS P 19.8 Power Dissipation3 TA = 25 °C TA = 70 °C N 2 P PD N 1.3 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.2 1 2015/11/12 1 page PV601CA N&P-Channel Enhancement Mode MOSFET REV 1.2 5 2015/11/12 5 Page PV601CA N&P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 11 2015/11/12 11 Page

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PDF Descargar	[ Datasheet PV601CA.PDF ]

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PDF PV601CA Data sheet ( Hoja de datos )