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Datasheet R8001CND-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
R80 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | R8001CND | Power MOSFET, Transistor R8001CND
Nch 800V 1A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
800V 8.7Ω ±1A 36W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant
lOutline
TO-252
SC-63
CPT3
�  ROHM Semiconductor mosfet | | |
| 2 | R8002ANJ | Power MOSFET, Transistor R8002ANJ
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
800V 4.3W 2A 40W
lOutline
LPT(S) (SC-83)
(2)
(1) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Ga ROHM Semiconductor mosfet | | |
| 3 | R8002ANX | Nch 800V 2A Power MOSFET R8002ANX
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
Features 1) Low on-resistance.
800V 4.3 2A 36W
Outline
TO-220FM
Inner circuit
(1) (2) (3) (2)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple.
(1) ROHM Semiconductor mosfet | | |
| 4 | R8002CND | Power MOSFET, Transistor R8002CND
Nch 800V 1A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
800V 4.3Ω ±2A 69W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant
lOutline
TO-252
SC-63
CPT3
� ROHM Semiconductor mosfet | | |
| 5 | R8005ANJ | Power MOSFET, Transistor R8005ANJ
Nch 800V 5A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
800V 2.08W
5A 40W
lOutline
LPT(S) (SC-83)
(2)
(1) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) G ROHM Semiconductor mosfet | | |
| 6 | R8008ANJ | Power MOSFET, Transistor R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
800V 0.98W
8A 40W
lOutline
LPT(S) (SC-83)
(2)
(1) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) G ROHM Semiconductor mosfet | | |
| 7 | R8008ANX | Nch 800V 8A Power MOSFET R8008ANX
Nch 800V 8A Power MOSFET
Datasheet
VDSS
800V
lOutline
RDS(on)(Max.)
1.03Ω
ID
±8A
TO-220FM
PD
66W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits ca ROHM Semiconductor mosfet | |
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