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PDF STPSC20065-Y Data sheet ( Hoja de datos )
| Número de pieza | STPSC20065-Y | |
| Descripción | power Schottky silicon carbide diode | |
| Fabricantes | STMicroelectronics | |
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STPSC20065-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
AK
K
A
K
TO-220AC
A
K
DO-247
Features
No reverse recovery charge in application
current range
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
ECOPACK®2 compliant component
AEC-Q101 qualified
PPAP capable
Operating Tj from -40 °C to 175 °C
Description
The SiC diode is a high voltage power Schottky
diode. It is manufactured using a silicon carbide
substrate. The wide band gap material allows the
design of a Schottky diode structure with a 650 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Used as a freewheeling or output rectification
diode, this rectifier will enhance the performance
and form factor of the targeted power supply or
inverter.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
20 A
650 V
175 °C
1.30 V
May 2016
DocID029260 Rev 1
This is information on a product in full production.
1/11
www.st.com
1 page  
STPSC20065-Y
Characteristics
Figure 7: Total capacitive charges versus reverse voltage applied ( typical values)
QCj(nC)
70
60
50
40
30
20
10
0
0
VR(V)
50 100 150 200 250 300 350 400
DocID029260 Rev 1
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5 Page 
STPSC20065-Y
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved
DocID029260 Rev 1
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| PDF Descargar | [ Datasheet STPSC20065-Y.PDF ] | |
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