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Datasheet CJL818C-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
CJL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJL1206 | Dual P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL1206
V(BR)DSS
-12V
Dual P-Channel Power MOSFET
RDS(on)MAX
45 mΩ@-4.5V 60 mΩ@-2.5V 90 mΩ@-1.8V
ID
-6A
SOT-23-6L
FEATURE z TrenchFET Power MOSFET
MARKING
APPLICATION z Load Switch for Portable Dev  JCET mosfet | | |
| 2 | CJL2301 | Dual P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL2301 Dual P-Channel MOSFET
V(BR)DSS
-20V
RDS(on)MAX
90mΩ@-4.5V 125mΩ@-2.5V
200mΩ@-1.8V
ID
-2.3A
SOT-23-6L
FEATURE TrenchFET Power MOSFET Equivalent to Two CJ2301
APPLICATION � JCET mosfet | | |
| 3 | CJL2623 | Dual P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETs
CJL2623 Dual P-Channel MOSFET
V(BR)DSS
-30 V
RDS(on)MAX
130mΩ@-10V 180mΩ@-4.5V
ID
-3 A
SOT-23-6L
FEATURE z TrenchFET Power MOSFET z Low Gate Charge z Low On-resistance z Surface Mount Package
MARKING JCET mosfet | | |
| 4 | CJL3407 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3407 P-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
-30V
RDS(on)MAX
\60mΩ@-10 V 87mΩ@-4.5V
ID
-4.1A
General Description The CJL3407 uses advanced trench technology to provide excelle JCET mosfet | | |
| 5 | CJL3415 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-L Plastic-Encapsulate MOSFETS
CJ/3415 P-Channel 20V(D-S) MOSFET
V(BR)DSS
-20V
RDS(on)MAX
50mΩ@-4.5V 60mΩ@-2.5V 73mΩ@-1. 8V
ID
-4.0A
SOT-23-6L
FEATURE Excellent RDS(ON), low gate charge,low gate voltage
High power and cur JCET mosfet | | |
| 6 | CJL3443 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3443 P-Channel 20-V(D-S) MOSFET
FEATURE z Fast Switching Speed z Low Gate Charge z High Performance Trench Technology for extremely Low RDS(on)
SOT-23-6L
1. GATE 2. DRAIN 3. SOURCE
Description This P-Chann JCET mosfet | | |
| 7 | CJL6601 | P- & N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6601 P-channel and N-channel Complementary MOSFETS
GENERAL DESCRIPTION The CJL6601 uses advanced trench technology to provide excellent RDS(on)
and low gate charge. The complementary MOSFETS form a high-spe JCET mosfet | |
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