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PDF APTM100H40FT3G Data sheet ( Hoja de datos )
| Número de pieza | APTM100H40FT3G | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTM100H40FT3G
Full - Bridge
MOSFET Power Module
VDSS = 1000V
RDSon = 400mΩ typ @ Tj = 25°C
ID = 21A @ Tc = 25°C
13 14
Application
Q1
18
22 7
19
23 8
Q2
Q3
11
10
Q4
26 4
27 3
29 30
15
31
R1
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 8™ Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
21
16
140
±30
480
390
18
Unit
V
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
1 page  
APTM100H40FT3G
Drain Current vs Source to Drain Voltage
50
40
TJ=125°C
30
20 TJ=25°C
10
0
0 0.3 0.6 0.9
VSD, Source to Drain Voltage (V)
1.2
0.35
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3 0.9
0.25 0.7
0.2
0.15
0.1
0.5
0.3
0.05
0
0.1
0.05
0.00001
0.0001
0.001
Single Pulse
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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