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PDF APTM100SK33T1G Data sheet ( Hoja de datos )
| Número de pieza | APTM100SK33T1G | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTM100SK33T1G
Buck chopper
MOSFET Power Module
VDSS = 1000V
RDSon = 330mΩ typ @ Tj = 25°C
ID = 23A @ Tc = 25°C
56
11
Q1
7
8
CR2
NTC
3
4
12
12
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
23
17
140
±30
396
390
18
Unit
V
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
1 page  
APTM100SK33T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2 0.9
1 0.7
0.8
0.5
0.6
0.3
0.4
0.2
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
Forward Current vs Forward Voltage
80
60 TJ=125°C
40
20
TJ=25°C
0
0.0 1.0 2.0 3.0 4.0
VF, Anode to Cathode Voltage (V)
QRR vs. Current Rate Charge
4
TJ=125°C
VR=800V
45 A
3
30 A
2
15 A
1
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Trr vs. Current Rate of Charge
500
TJ=125°C
400 VR=800V
300
45 A
200 30 A
15 A
100
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
30
TJ=125°C
25 VR=800V
30 A
15 A
20
15 45 A
10
5
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
200
160
120
80
40
0
1 10 100 1000
VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp.
50
Duty Cycle = 0.5
40 TJ=175°C
30
20
10
0
25 50 75 100 125 150 175
Case Temperature (ºC)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTM100SK33T1G.PDF ] | |
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