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PDF MJD127 Data sheet ( Hoja de datos )
| Número de pieza | MJD127 | |
| Descripción | PNP Transistor | |
| Fabricantes | JCET | |
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Hay una vista previa y un enlace de descarga de MJD127 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD127 TRANSISTOR (PNP)
FEATURES
High DC Current Gain
Electrically Similar to Popular TIP127
Built-in a Damper Diode at E-C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-8
1.5
150
-55-150
Unit
V
V
V
A
W
℃
℃
TO-251-3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-30mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-10mA,IC=0
Collector cut-off current
ICBO VCB=-100V,IE=0
Collector-emitter cut-off current
ICEO =VCE =-50V,IB 0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
hFE(1)
hFE(2)
VCE(sat)
*
1
VCE(sat)
*
2
VBE(sat) *
VBE*
VCE=-4V,IC=-4A
VCE=-4V,IC=-8A
IC=-4A,IB=-16mA
IC=-8A,IB=-80mA
IC=-8A,IB=-80mA
VCE=-4V,IC=-4A
Collector output capacitance
Cob VCB=-10V,IE=0,f=0.1MHz
*Pulse Test: Pulse Width≤380µs, Duty Cycle≤2%
Min
-100
-100
-5
1000
100
Typ Max
Unit
V
V
V
-10 µA
-10 µA
-2 mA
12000
-2 V
-4 V
-4.5 V
-2.8 V
300 pF
www.cj-elec.com
1
D,Oct,2014
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MJD127.PDF ] | |
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