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Número de pieza | BSC0911ND | |
Descripción | Dual N-Channel OptiMOS MOSFET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSC0911ND (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Dual N-Channel OptiMOS™ MOSFET
Features
Product Summary
• Dual N-channel OptiMOS™ MOSFET
• Optimized for high performance Buck converter
• Logic level (4.5V rated)
VDS
RDS(on),max
• N-channel
ID
• Qualified according to JEDEC1) for target applications
VGS=10 V
VGS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
VPhase
BSC0911ND
Q1 Q2
25 25 V
3.2 1.2 mW
4.8 1.7
40 40 A
Type
BSC0911ND
Package
PG-TISON-8
Marking
0911ND
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current5)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
ID
I D,pulse
E AS
V GS
P tot
T C=70 °C, V GS=10 V
T A=25 °C, V GS=4.5 V3)
T A=70 °C, V GS=4.5 V3)
T A=25 °C, V GS=4.5 V4
)
T C=70 °C
Q1: I D=20 A,
Q2: I D=20 A,
R GS=25 W
T A=25 °C2)
T A=25 °C, minimum
footprint3)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
2) One transistor active
T j, T stg
Value
Q1 Q2
40 40
18 30
14 24
14 22
160 160
20 160
±20
2.5 2.5
1.0 1.0
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev.2.0
page 1
2013-07-30
1 page 1 Power dissipation (Q1)
P tot=f(T A)4)
2 Power dissipation (Q2)
P tot=f(T A)4)
BSC0911ND
1.2 1.2
11
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
0
0 40
3 Drain current (Q1)
I D=f(T C)
parameter: V GS≥10 V
50
80
TA [°C]
120
0
160 0 40
4 Drain current (Q2)
I D=f(T C)
parameter: V GS≥10 V
50
80
TA [°C]
120
160
40 40
30 30
20 20
10 10
0
0
Rev.2.0
40 80 120
TC [°C]
0
160 0
page 5
40 80 120
TC [°C]
160
2013-07-30
5 Page 25 Typ. gate charge (Q1)
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
10
26 Typ. gate charge (Q2)
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
10
BSC0911ND
8
12 V
5V
20 V
6
4
8
12 V
6 5 V 20 V
4
22
0
0 4 8 12 16
Qgate [nC]
27 Drain-source breakdown voltage (Q1)
V BR(DSS)=f(T j); I D=1 mA
0
20 0 10 20 30 40 50
Qgate [nC]
28 Drain-source breakdown voltage (Q2)
V BR(DSS)=f(T j); I D=1 mA
60
28
27
26
25
24
23
22
21
20
-60 -20 20 60 100 140 180
Tj [°C]
28
27
26
25
24
23
22
21
20
-60 -20 20
60 100 140 180
Tj [°C]
Rev.2.0
page 11
2013-07-30
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet BSC0911ND.PDF ] |
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BSC0911ND | Dual N-Channel OptiMOS MOSFET | Infineon |
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