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PDF MBRB4030 Data sheet ( Hoja de datos )

Número de pieza MBRB4030
Descripción Power Rectifier
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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MBRB4030
Preferred Device
SWITCHMODEt
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a proprietary barrier metal.
Features
Guardring for Stress Protection
Maximum Die Size
175°C Operating Junction Temperature
Short Heat Sink Tab Manufactured − Not Sheared
Pb−Free Packages are Available
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads Readily Solderable
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR) TC = +115°C (Note 1)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz),
TC = +112°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
30
40
80
300
V
A
A
A
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Operating Junction Temperature Range
(Note 2)
Tstg −65 to +175 °C
TJ −65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Reverse Energy (Unclamped Inductive
Surge), (TC = 25°C, L = 3.0 mH)
W
600 mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Rating applies when pins 1 and 3 are connected.
2. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 30 VOLTS
1
4
3
4
1
3
D2PAK
CASE 418B
STYLE 3
MARKING DIAGRAM
AY WW
B4030G
AKA
A
Y
WW
B4030
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 6
1
Publication Order Number:
MBRB4030/D

1 page




MBRB4030 pdf
MBRB4030
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
VARIABLE
CONFIGURATION
ZONE
L
M
R
M
N
L
U
M
P
L
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
10.66
0.42
1.016
0.04
5.08
0.20
17.02
0.67
3.05
0.12
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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