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PDF MB85R256F Data sheet ( Hoja de datos )
| Número de pieza | MB85R256F | |
| Descripción | Memory FRAM | |
| Fabricantes | Fujitsu | |
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FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
DS501-00011-1v0-E
256 K (32 K × 8) Bit
MB85R256F
■ DESCRIPTIONS
The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R256F can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration : 32,768 words × 8 bits
• High endurance 10 Billion Read/writes
• Peripheral circuit CMOS construction
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating temperature range : −40 °C to +85 °C
• Data retention : 10 years (+55 °C)
• Package
: 28-pin, SOP flat package
: 28-pin, TSOP(1) flat package
Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.7
1 page  
MB85R256F
■ ABSOLUTE MAXIMUM RANGES
Parameter
Symbol
Rating
Min Max
Unit
Power supply voltage*
VCC
− 0.5
+ 4.0
V
Input voltage*
Output voltage*
Operating temperature
VIN
VOUT
TA
− 0.5
− 0.5
− 40
VCC + 0.5
VCC + 0.5
+ 85
V
V
°C
Storage temperature
Tstg
− 40
+ 125
°C
* : These parameters are based on the condition that VSS is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Value
Symbol
Unit
Min Typ Max
Power supply voltage*
VCC 2.7 3.3 3.6 V
High level input voltage*
Low level input voltage*
Operating temperature
VIH VCC × 0.8 ⎯ VCC + 0.5 V
VIL
− 0.5
⎯
+ 0.6
V
TA
− 40
⎯
+ 85
°C
* : These parameters are based on the condition that VSS is 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS501-00011-1v0-E
5
5 Page 
MB85R256F
■ ORDERING INFORMATION
Part number
MB85R256FPF-G-BNDE1
MB85R256FPFCN-G-BNDE1
MB85R256FPF-G-BND-ERE1
Package
28-pin plastic SOP
(FPT-28P-M17)
28-pin plastic TSOP(1)
(FPT-28P-M19)
28-pin plastic SOP
(FPT-28P-M17)
Remarks
Embossed carrier tape
DS501-00011-1v0-E
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MB85R256F.PDF ] | |
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