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PDF MJD3055 Data sheet ( Hoja de datos )

Número de pieza MJD3055
Descripción Silicon NPN Power Transistor
Fabricantes Inchange Semiconductor　
Logotipo Inchange Semiconductor Logotipo



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No Preview Available ! MJD3055 Hoja de datos, Descripción, Manual

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD3055
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJD2955
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-base Voltage
5V
IC Collector Current-Continuous
10 A
IB Base Current
6A
Collector Power Dissipation@TC=25℃
20
PC
Collector Power Dissipation@Ta=25℃ 1.75
W
Tj Junction Tmperature
Tstg Storage Temperature Range
150
-55~150
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
isc website：www.iscsemi.com
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