(PDF) STP6625 Datasheet - P Channel Enhancement Mode MOSFET

Número de pieza	STP6625
Descripción	P Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 FEATURE l -60V/-5.0A, RDS(ON) = 60mΩ (Typ.) @VGS =-10 l -60V/-3.0A, RDS(ON) = 85mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6625 2010. V1 1 page TYPICAL CHARACTERICTICS STP6625 P Channel Enhancement Mode MOSFET -5.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6625 2010. V1 5 Page

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PDF STP6625 Data sheet ( Hoja de datos )