(PDF) Si9433DY Datasheet - P-Channel Enhancement-Mode MOSFET

Número de pieza	Si9433DY
Descripción	P-Channel Enhancement-Mode MOSFET
Fabricantes	TEMIC
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No Preview Available ! P-Channel Enhancement-Mode MOSFET Si9433DY Product Summary VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 –20 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ SSS SO-8 S1 S2 S3 G4 8D 7D 6D 5D G Top View DDDD P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –20 "12 "5.4 "4.4 "10 –2.6 2.5 1.6 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 50 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1207 . Siliconix S-47958—Rev. G, 15-Apr-96 1 1 page

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PDF Si9433DY Data sheet ( Hoja de datos )