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PDF 2SK3873-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3873-01 | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji | |
| Logotipo |  |
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2SK3873-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200407
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Ratings
280
Unit
V
Remarks
Drain(D)
VDSX
280 V VGS=-30V
Continuous Drain Current
ID
56 A
Pulsed Drain Current
Gate-Source Voltage
ID(puls]
VGS
±224
±30
A
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
IAR
EAS
EAR
dVDS/dt
dV/dt
PD
Tch
Tstg
56
1039.1
A Note *1
mJ Note *2
41 mJ Note *3
20
5
410
2.50
+150
-55 to +150
kV/µs VDS=<280V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Source(S)
Note *1:Tch<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=23A,L=3.37mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF=< -ID, -di/dt=50A/µs,VCC=< BVDSS, Tch=< 150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Min. Typ.
280
3.0
Max. Units
V
5.0 V
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
IDSS
IGSS
VDS=280V VGS=0V
VDS=224V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
25 µA
250
100 nA
Drain-Source On-State Resistance
RDS(on)
ID=28A VGS=10V
51 61 mΩ
Forward Transconductance
gfs
ID=28A VDS=25V
12 24
S
Input Capacitance
Ciss VDS=75V
3600 5400
pF
Output Capacitance
Coss
VGS=0V
530 795
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Crss
td(on)
tr
td(off)
tf
f=1MHz
VCC=180V ID=28A
VGS=10V
RGS=10 Ω
35 52.5
40 60 ns
58 87
80 120
10 15
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
VSD
trr
Qrr
VCC=140V
ID=56A
VGS=10V
IF=56A VGS=0V Tch=25°C
IF=56A VGS=0V
-di/dt=100A/µs Tch=25°C
80
30
25
1.20
400
4.5
120
45
38
1.50
nC
V
ns
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.305 °C/W
50.0 °C/W
www.fujielectric.co.jp/fdt/scd
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3873-01.PDF ] | |
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