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PDF TMP6N65 Data sheet ( Hoja de datos )
| Número de pieza | TMP6N65 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP6N65/TMPF6N65
TMP6N65G/TMPF6N65G
VDSS = 715 V @Tjmax
ID = 5.5A
RDS(on) = 1.6 W(max) @ VGS= 10 V
D
G
S
Device
TMP6N65 / TMPF6N65
TMP6N65G / TMPF6N65G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP6N65 / TMPF6N65
TMP6N65G / TMPF6N65G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP6N65(G) TMPF6N65(G)
650
±30
5.5 5.5 *
3.46 3.46 *
22 22*
196.6
5.5
12
120 39
0.96 0.31
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
June 2011 : Rev1
www.trinnotech.com
TMP6N65(G)
1.04
62.5
TMPF6N65(G)
3.2
62.5
Unit
℃/W
℃/W
1/7
1 page  
TMP6N65/TMPF6N65
TMP6N65G/TMPF6N65G
100
Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
TMP6N65(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 1.04 ℃/W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF6N65(G)
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 3.2 ℃/W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
June 2011 : Rev1
www.trinnotech.com
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TMP6N65.PDF ] | |
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