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PDF DSI2x55-16A Data sheet ( Hoja de datos )

Número de pieza DSI2x55-16A
Descripción Standard Rectifier
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! DSI2x55-16A Hoja de datos, Descripción, Manual

Standard Rectifier
Parallel legs
Part number
DSI2x55-16A
2
3
DSI2x55-16A
VRRM
I FAV
VF
= 1600 V
= 2x 60 A
= 1.22 V
Backside: isolated
1
4
Features / Advantages:
Planar passivated chips
Very low leakage current
Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130307b

1 page




DSI2x55-16A pdf
DSI2x55-16A
Rectifier
120
100
700
50 Hz, 80% VRRM
600
80
IF
60
[A]
40
TVJ = 125°C
150°C
20
TVJ = 125°C
0
0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
IFSM 500
[A] 400
300
TVJ = 45°C
TVJ = 150°C
200
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
104
VR = 0 V
I2t
103
[A2s]
T = 45°C
VJ
TVJ = 150°C
102
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time per diode
60
40
Ptot
dc =
1
0.5
0.4
0.33
0.17
0.08
[W]
20
RthHA :
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
160
120
IF(AV)M
80
[A]
40
dc =
1
0.5
0.4
0.33
0.17
0.08
0
0 10 20 30 40 50 0 25 50 75 100 125 150 175
IF(AV)M [A]
Tamb [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current
versus case temperature
0.7
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10 100 1000
t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.031
0.00024
2 0.0554 0.0036
3 0.114
0.0235
4 0.281
0.142
5 0.1686 0.7
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130307b

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