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Número de pieza | SSF11NS65U | |
Descripción | N-Channel MOSFET | |
Fabricantes | SILIKRON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF11NS65U (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Main Product Characteristics:
VDSS
RDS(on)
ID
650V
0.32Ω (typ.)
11A
Features and Benefits:
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
TO-220
SSF11NS65U
Marking and pin
Assignment
Schematic diagram
Description:
The SSF11NS65U series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=133mH
Avalanche Current @ L=133mH
Operating Junction and Storage Temperature Range
Max.
11
7
44
83
0.66
650
± 30
250
1.94
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.06.05
www.silikron.com
Version : 1.2
page 1 of 8
1 page Typical electrical and thermal characteristics
SSF11NS65U
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.06.05
www.silikron.com
Version : 1.2
page 5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SSF11NS65U.PDF ] |
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