|
|
PDF 1SS412 Data sheet ( Hoja de datos )
| Número de pieza | 1SS412 | |
| Descripción | Silicon Epitaxial Planar Type Diode | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 1SS412 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS412
General-Purpose Rectifier Applications
1SS412
Unit: imm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: VF = 1.0 V (typ.)
: IR = 0.1 nA (typ.)
: CT = 3.0 pF (typ.)
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
IFM
IO
IFSM
P
300 *
100 *
1*
100
mA
mA
A
mW
Junction temperature
Storage temperature range
Tj 150 °C JEDEC
Tstg −55 to 150 °C JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-2P1C
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
(between cathode and anode)
Symbol
VF
IR
CT
Test
Circuit
Test Condition
― IF = 100 mA
― VR = 80 V
― VR = 0, f = 1 MHz
Min Typ. Max Unit
― 1.0 1.3 V
― 0.1 10 nA
― 3.0 ― pF
Equivalent Circuit (Top View)
Marking
P9
Start of commercial production
2002-08
1 2014-03-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS412.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1SS412 | Silicon Epitaxial Planar Type Diode | Toshiba |
| 1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |  SEMTECH |
| 1SS413 | Schottky Barrier Diode | Toshiba |
| 1SS413CT | Schottky Barrier Diode | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |