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Datasheet ZXMN10A08E6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ZXMN10A08E6 | 100V N-CHANNEL ENHANCEMENT MODE MOSFET ZXMN10A08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4
ID= 1.5A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high effic |
 Zetex Semiconductors |
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| 3 | ZXMN10A08E6 | 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 100V
Max RDS(on)
250mΩ @ VGS = 10V 300mΩ @ VGS = 6V
Max ID TA = 25°C (Note 5)
1.9A
1.68A
Description and Applications
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, |
 Diodes |
|
| 2 | ZXMN10A08E6TA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 100V
Max RDS(on)
250mΩ @ VGS = 10V 300mΩ @ VGS = 6V
Max ID TA = 25°C (Note 5)
1.9A
1.68A
Description and Applications
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, |
Diodes |
|
| 1 | ZXMN10A08E6TC | 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 100V
Max RDS(on)
250mΩ @ VGS = 10V 300mΩ @ VGS = 6V
Max ID TA = 25°C (Note 5)
1.9A
1.68A
Description and Applications
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, |
Diodes |
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