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Datasheet TIM7785-8SL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TIM7785-8SL | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM7785-8SL
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET |
Toshiba |
TIM7785- Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TIM7785-16UL | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM7785-4UL | MICROWAVE POWER GaAs FET |
Toshiba Semiconductor |
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TIM7785-8SL | MICROWAVE POWER GaAs FET |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
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