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Datasheet MBR3060 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 52 | MBR3060 | Schottky Barrier Rectifier ( Diode ) INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3060
FEATURES ·Dual diode construction;terminals 1 and 3 may be connected
for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanch |
 Inchange Semiconductor |
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| 51 | MBR3060 | Axial Lead Rectifier MBR3060
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high |
 ON Semiconductor |
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| 50 | MBR3060 | SCHOTTKY BARRIER DIODE MBR3020 THRU MBR30100
Features
• Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C • Storage Temperature: - |
 PFS |
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| 49 | MBR3060 | 30 Amp Rectifier 20 to 100 Volts Schottky Barrier MCC
Features
• • • •
omponents 21201 Itasca Street Chatsworth !"# $
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MBR3020 THRU MBR30100
30 Amp Schottky Barrier Rectifier 20 to 100 Volts TO-3
Metal of siliconrectifier, majonty carrier conducton Guard ring for transien |
 Micro Commercial Components |
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