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Datasheet MBM29DL800BA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MBM29DL800BA | 8M (1M X 8/512K X 16) BIT FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20860-3E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Pr |  Fujitsu Media Devices | data |
| 2 | MBM29DL800BA-12 | 8M (1M x 8/512K x 16) BIT FLASH MEMORY FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20860-3E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Simultaneous operations Read-while-Erase or Read-while-Pr |  Fujitsu | data |
| 3 | MBM29DL800BA-70 | 8M (1M x 8/512K x 16) BIT FLASH MEMORY FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20860-3E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Simultaneous operations Read-while-Erase or Read-while-Pr | Fujitsu | data |
| 4 | MBM29DL800BA-90 | 8M (1M x 8/512K x 16) BIT FLASH MEMORY FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20860-3E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Simultaneous operations Read-while-Erase or Read-while-Pr | Fujitsu | data |
MBM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MBM200A6 | IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES Hitachi Semiconductor igbt | | |
| 2 | MBM200GR12 | IGBT POWER MODULE Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No. IGBT-SP-99024(R1)
MBM200GR12
[Rated 200A/1200V, Dual-pack type]
FEATURES
· Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) �  Hitachi igbt | | |
| 3 | MBM200GR6 | IGBT POWER MODULE Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No.IGBT-SP-99020(R1)
MBM200GR6
[Rated 200A/600V, Dual-pack type]
FEATURES
· Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · H Hitachi igbt | | |
| 4 | MBM200GS12AW | IGBT POWER MODULE IGBT MODU ODULE
MBM200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 80 16
E2
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
3-M5 2- φ5.6
16
Hitachi igbt | | |
| 5 | MBM200GS6AW | IGBT POWER MODULE IGBT MODU ODULE
MBM200GS6AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 4-Fast-on Terminal #110
G2 E2
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
Hitachi igbt | | |
| 6 | MBM200JS12AW | IGBT POWER MODULE IGBT MODU ODULE
MBM200JS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
4- φ 6.5
20
108 93 18
20
4 Hitachi igbt | | |
| 7 | MBM200JS12EW | IGBT POWER MODULE IGBT MODU ODULE
MBM200JS12EW
Silicon N-channel IGBT OUTLINE DRAWING
4-Fast-on Terminal #110
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
4- φ Hitachi igbt | |
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