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Datasheet L-314 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | L-314 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD(mw) 100 Power Dissipation VR(V) 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S | PARA | diode |
L-3 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | L-314 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD(mw) 100 Power Dissipation VR(V) 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S PARA diode | | |
2 | L-315 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD(mw) 100 Power Dissipation VR(V) 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S PARA diode | | |
3 | L-316 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD(mw) 100 Power Dissipation VR(V) 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S PARA diode | | |
4 | L-318 | 3.0mm INFRARED EMITTING DIODE L-31XXIR1XX
3.0mm INFRARED EMITTING DIODE
◆PACKAGE DIMENSIONS
◆ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No. L-31XXIR1XX PARAMETER PD(mw) 100 Power Dissipation VR(V) 5 Reverse Voltage Topr -35℃ to 85℃ Tstg -35℃ to 85℃ Storage Temperature Range
Operating Temperature Range Lead S PARA diode | | |
5 | L-319 | 3.0mm Dia LED LAMP / MULTI-COLOR L-319XX 3.0mm Dia LED LAMP, MULTI-COLOR
Chip Part No. Raw Material Emitted Color Lens Color
Wave Length λp(nm)
Electro-Optical Characteristics Vf(V)20mA Iv(mcd)10mA Typ. Max. Typ.
View Angle (deg)
GaP GaP GaAsP/GaP L-319EGW GaP GaP L-319GYW GaAsP/GaP GaAlInP L-319LESGW GaP L-319HGW
Red Green PARA led | | |
6 | L-32P3C | PhotoTransistor PHOTOTRANSISTOR
L-32P3C
Features
!MECHANICALLY
Description
AND SPECTRALLY MATCHED TO P3 Made with NPN silicon phototransistor chips.
THE L-34 SERIES INFRARED EMITTING LED LAMP.
!WATER
CLEAR LENS.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0. Kingbright transistor | | |
7 | L-34F3BT | INFRARED EMITTING DIODE T-1 (3mm) INFRARED EMITTING DIODE
Part Number: L-34F3BT
Features
z Mechanically and spectrally matched to the phototransistor. z RoHS compliant.
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
KingbrightPackage Dimensions
Notes: 1. All dimensions are in millimeters (inches). Kingbright diode | |
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Número de pieza | Descripción | Fabricantes | |
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