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Datasheet KTD1898 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KTD1898 | NPN Transistor RoHS KTD1898
KTD1898 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
1A
OV(BR)CBO:
100 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
I |  WEJ | transistor |
| 2 | KTD1898 | NPN Transistors SMD Type
NPN Transistors KTD1898
Transistors
■ Features
● Small Flat Package ● General Purpose Application
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Volta |  Kexin | transistor |
| 3 | KTD1898 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. FEATURES
1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260.
KTD1898
EPITAXIAL PLANAR NPN TRANSISTOR
A H
C
G
J B E
D
D K F F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Vo | .gif){kind=small} KEC(Korea Electronics) | transistor |
| 4 | KTD1898 | Epitaxial Planar NPN Transistors KTD1898
Epitaxial Planar NPN Transistors
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature
* Single pu |  Weitron | transistor |
| 5 | KTD1898 | TRANSISTOR KTD189
TRANSISTOR (NPN)
FEATURES z Small Flat Package z General Purpose Application
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag |  Jin Yu Semiconductor | transistor |
KTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KTD-LM16 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two  ETC data | | |
| 2 | KTD-LM32 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 3 | KTD-LM64 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two ETC data | | |
| 4 | KTD-LM8 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 5 | KTD1003 | EPITAXIAL PLANAR NPN TRANSISTOR J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING  KEC transistor | | |
| 6 | KTD1028 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
KTD1028
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTER KEC transistor | | |
| 7 | KTD1028V | EPITAXIAL PLANAR NPN TRANSISTOR KEC transistor | |
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