J309 PDF Datasheet

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. • Sourced from Process 92. • Source & Drain are interchangeable. J309 J31

J309, J310 Preferred Device JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Source Voltage Gate −Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg

N-Channel JFET High Frequency Amplifier CORPORATION J308 – J310 / SST308 – SST310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Continuous Forward Gate Current . . . . . . . . . . . . .

U/J/SST308 SERIES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J/SST) Continuous Power Dissip

J/SST/U308 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J308 J309 J310 SST308 SST309 SST310 U309 U310 VGS(off) (V) −1 to −6.5 −1 to −4 −2 to −6.5 −1 to −6.5 −1 to −4 −2 to −6.5 −1 to −4 −2.5 to −6 J308 J309 J310 SST308 SST309 SST310 U309 U310 V(BR)GSS Min (V) −25 −25 −25 −25 −25 −25 −25 −25 gfs Min